Coating and developing system and coating and developing method

ABSTRACT

A coating and developing system includes a resist film forming unit block and antireflection film forming unit blocks stacked in layers to form a resist film and an antireflection film underlying the resist film and an antireflection film overlying the resist film in a small space. The coating and developing system can cope with either of a case where antireflection films are formed and where any antireflection film is not formed. Film forming unit blocks: TCT layer B 3 , a COT layer B 4  and a BCT layer B 5 , and developing unit blocks: DEV layers B 1  and B 2 , are stacked up in layers in a processing block S 2 . The TCT layer B 3 , the COT layer B 4  and the BCT layer B 5  are used selectively where antireflection films are formed and any antireflection film is not formed. The coating and developing system is controlled by a carrying program and software.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to a coating and developing system forapplying a liquid resist to a surface of a substrate, such as asemiconductor wafer or a LCD substrate, namely, a glass substrate for aliquid crystal display, to coat the surface with a resist film anddeveloping the exposed resist film, and a coating and developing method.

2. Description of the Related Art

In a manufacturing process for manufacturing semiconductor devices orLCD panels, a resist pattern is formed on a substrate by aphotolithographic process. The photolithographic process includes aseries of steps of forming a resist film on a substrate, such as asemiconductor wafer (hereinafter, referred to simply as “wafer”) byapplying a liquid resist to the surface of the substrate, exposing theresist film to light through a photomask, and developing the exposedresist film to form a desired resist pattern.

Generally, this photolithographic process is carried out by a resistpattern forming system built by combining an exposure system with acoating and developing system. FIG. 11 shows a known resist patternforming system of this type disclosed in, for example, Patentdocument 1. Referring to FIG. 11, a carrier 10 holding a plurality ofwafers W is delivered onto a carrier stage 11 installed in a carrierhandling block 1A, and then a transfer arm 12 transfers the wafer W fromthe carrier 10 to a processing block 1B. The wafer W is delivered to acoating unit 13A installed in the processing block 1B. The coating unit13A applies a liquid resist to a surface of the wafer W in a resistfilm. Subsequently, the wafer coated with the resist film is carried viaan interface block 1C to an exposure system 1D.

The wafer W is returned to the processing block 1B after being subjectedto an exposure process. A developing unit 13B subjects the wafer W to adeveloping process, and then the wafer W is returned to the carrier 10.Indicated at 14 (14 a to 14 c) in FIG. 11 are shelf units including aheating unit for processing a wafer by a predetermined heating process,a cooling unit for processing the wafer by a predetermined coolingprocess and a transfer stage. Each of the shelf units processes a waferbefore or after the wafer is processed by the coating unit 13A and thedeveloping unit 13B. Each of two carrying devices 15A and 15B installedin the processing block 1B carries a wafer W in the processing block 1Bfrom one to another of modules in which the wafer W is to be placed,such as the coating Unit 13A, the developing unit 13B and the shelfunits 14 a to 14 c. Each of all the wafers W to be processed by theforegoing processes is carried to desired modules according to acarrying schedule specifying time points when the wafer W is to becarried to the modules.

Resist films of different types are formed in different coating mode,respectively. A first coating mode forms a resist film andantireflection films over and under the resist film, a second coatingmode forms a resist film and an antireflection film over or under theresist film, and a third coating mode forms only a resist film.Therefore, in some cases, the units necessary for forming films, such asthe coating unit, the heating unit and the cooling unit, processeswafers of different lots under different processing conditions. In sucha case, a complex carrying program must be prepared for each type of theresist film when the coating unit, the heating unit and the cooling unitare installed in the same processing block because the different typesof resist films are formed by using different units and are carriedalong different carrying paths. Since carrying programs to be producedaccording to the carrying schedule are originally complex, work forproducing a carrying program for each of desired resist films is verycomplex and troublesome and such work is practically impossible.

When many units including the coating unit, the heating unit and thecooling unit are installed in the same processing block, the processingblock is inevitably large and occupies a large area. A recent exposuresystem operates at a high throughput. Consequently, the coating anddeveloping system is required to have a high processing abilitycorresponding to the throughput of the exposure system. However, thesame carrying system operates to carry a wafer W to the coating unit forforming a resist film before the exposure process, to carry a wafer toan antireflection film forming unit for forming the antireflection filmand to carry a wafer coated with an exposed resist film to thedeveloping unit after exposure, it is difficult to operate the exposuresystem at a high throughput.

The inventors of the present invention have been making studies todevelop a multilayer system including an area holding modules forprocesses preceding an exposure process and an area holding modules forcontaining modules for carrying out processes succeeding the exposureprocess disposed in a vertical arrangement to reduce load on carryingmeans, to improve carrying efficiency, to increase the throughput of acoating and developing system, and having a large degree of freedom ofcarrying route selection.

Although construction that disposes a coating area and a developing areain a vertical arrangement and provides the coating area and thedeveloping area with individual carrying means is mentioned in Patentdocument 2, nothing is mentioned in Patent document 2 about improvingcarrying efficiency and increasing the degree of freedom of carryingroute selection.

Patent document 1: JP 2004-193597 A

Patent document 2: Jpn. Pat. No. 3337677

SUMMARY OF THE INVENTION

The present invention has been made under such circumstances and it istherefore an object of the present invention to provide techniques forforming antireflection films over and under a resist film, capable ofreducing necessary space, of increasing the degree of freedom ofcarrying route selection and of highly efficiently carrying a wafer.

Another object of the present invention is to provide techniques capableof dealing with either of a case where an antireflection film is formedon a resist film and a case where any antireflection film is not formedon a resist film, and of simplifying software.

A coating and developing system according to the present inventionincludes: a carrier handling block for receiving a substrate carriedthereto by a carrier; a processing block for processing the substratetransferred thereto from the carrier handling block to form filmsincluding a resist film on the substrate; an interface block forcarrying the substrate to an exposure system, receiving the substrateprocessed by the exposure system and returning the substrate to theprocessing block to subject the substrate to a developing process and totransfer the substrate processed by the developing process to thecarrier handling block; wherein a) the processing block is provided witha plurality of film forming unit blocks stacked up in layers and adeveloping unit block put on the film forming unit blocks, b) theplurality of film forming unit blocks stacked up in layers include aliquid resist applying unit block for applying a liquid resist to thesubstrate, a liquid-processing unit block for applying a chemicalsolution for forming an antireflection film to the substrate before theliquid resist is applied to the substrate, and a liquid-processing unitblock for applying a chemical solution for forming an antireflectionfilm to the substrate after the liquid resist has been applied to thesubstrate; and c) each of the unit blocks includes a liquid-processingunit for applying a chemical solution to the substrate, a heating unitfor heating the substrate, a cooling unit for cooling the substrate, anda carrying means for carrying the substrate from one to another of theliquid-processing unit, the heating unit and the cooling unit.

The coating and developing system according to the present invention mayfurther include carrying recipes specifying substrate carrying paths inthe unit blocks; and a mode selecting means for selecting one of a firstcarrying mode in which a substrate is carried to all the unit blocks, asecond carrying mode in which a substrate is carried to a liquid resistapplying unit block, a liquid-processing unit block for forming anantireflection film before the liquid resist is applied to a substrateand a developing unit block for carrying out a developing process, and athird carrying mode in which a substrate is carried to a liquid resistapplying unit block, a chemical solution applying unit block forapplying a chemical solution for forming an antireflection film afterthe liquid resist has been applied to the wafer, and a developing unitblock for carrying out a developing process; wherein the mode selectingmeans selects the unit blocks to which a substrate is to be carried andselects the carrying recipes for the selected unit blocks to process asubstrate.

The coating and developing system according to the present invention mayfurther include a first transfer stage group of first transfer stagesstacked up in layers for the unit blocks, disposed on the side of thecarrier handling block to receive a substrate from and deliver asubstrate to the carrying means of each unit block; a second transferstage group of second transfer stages stacked up in layers and disposedon the side of the interface block to receive a substrate from anddeliver a substrate to the carrying means of each unit block; a firstsubstrate transfer means for carrying a substrate from one to another ofthe first delivery stages; and a second substrate carrying means forcarrying a substrate from one to another of the second delivery stages.The first delivery stage group may include a transfer stage, for thecarrier handling block, via which a substrate is carried between thecarrier handling block and the processing block, and the second deliverystage group may include an interface block transfer stage via which asubstrate is carried between the interface block and the processingblock.

Preferably, the liquid-processing unit included in the film forming unitblock has a plurality of laterally arranged substrate holding devices,respectively for holding a plurality of substrates, placed in a commonprocessing vessel, and a common chemical solution applying nozzle forapplying a chemical solution to substrates held by the plurality ofsubstrate holding devices.

In the coating and developing system according to the present invention,an auxiliary block provided with functional units, which carries outprocesses after a film forming process and before an exposure processand/or after the exposure process and before the developing process andafter the developing process, is interposed between the processing blockand the interface block. The functional units of the auxiliary block mayinclude at least one of a film thickness examining unit for examiningthe thickness of a film formed on a substrate, a cleaning unit forcleaning a substrate before the exposure process and/or after theexposure process, a defocus inspecting device for finding a faultilyregistered pattern occurred in the exposure system, an irregular coatingdetecting device for detecting irregularities in a liquid resist film, afaulty development detecting device for detecting defects in a developedfilm, a particle counting device for counting particles adhering to asubstrate, a comet detecting device for detecting comets in a resistfilm formed on a substrate, a splash-back detecting device, a defectdetecting device for detecting defects in the surface of a substrate, ascum detecting device for detecting residual resist remaining on asubstrate processed by a developing process, a defect detecting devicefor detecting defects caused by a liquid resist applying process and/ora developing process, a line width measuring device for measuring linesof a patterned resist film formed on a substrate, and a registerexamining device for examining the register of a photomask on asubstrate after an exposure process. When the exposure system forms aliquid layer on the surface of a substrate for immersion exposure, thefunctional unit of the auxiliary block may be a cleaning unit forcleaning a substrate processed by immersion exposure.

A protective film forming unit block for forming a water-repellentprotective film over a resist film formed on a substrate is laid on theplurality of stacked film forming unit blocks. Preferably, the pluralityfilm forming unit blocks of the coating and developing system are thesame in the layout of the liquid-processing unit, the heating unit, thecooling unit and the carrying means.

The coating and developing system carries out a coating and developingmethod including the steps of: forming a first antireflection film on asurface of a substrate by the film forming unit block; forming a resistfilm by applying a liquid resist to the first antireflection film formedon the surface of the substrate by the film forming unit block differentfrom that formed the first antireflection film; forming a secondantireflection film over the resist film by the film forming unit blockdifferent from that formed the resist film; and subjecting the substratecoated with the resist film and processed by an exposure process to adeveloping process.

The coating and developing system carries out a coating and developingmethod including the steps of: selecting one of a first carrying mode inwhich a substrate is carried to all the film forming unit blocks, asecond carrying mode in which a substrate is carried to the liquidresist applying unit block and to a liquid-processing unit block forforming an antireflection film before a resist film is formed on asubstrate, and a third carrying mode in which a substrate is carried tothe liquid resist applying unit block for applying a liquid resist tothe substrate and to the liquid-processing unit block for applying achemical solution for forming an antireflection film to the substrateafter the liquid resist has been applied to the substrate; forming filmson the substrate by carrying the substrate from one to another of thefilm forming unit blocks in the selected carrying mode; and subjectingthe substrate coated with the films and processed by an exposure processto a developing process by a developing unit block in a layer other thanlayers including the plurality of film forming unit blocks.

According to the present invention, the plurality of stacked filmforming unit blocks include a resist film forming unit block for forminga resist film on a substrate, an antireflection film forming unit blockfor forming an antireflection film on a substrate before a resist filmis formed on the substrate, and an antireflection forming unit block forforming an antireflection film over a resist film formed on a substrate.The processing block capable of forming antireflection films over andunder a resist film occupies a small area and needs a small space forinstallation.

The coating and developing system is capable of dealing with either of aprocess that forms an antireflection film and a process that does notform any antireflection film by selectively using the film forming unitblocks. Since a substrate is carried along the same substrate carryingpaths in all the unit blocks, a substrate can be carried according to asimple carrying program even in a case where the coating and developingsystem forms different films and hence software is simplified.

The first and the second substrate carrying means carry a substratebetween the shelf unit blocks. A substrate subjected to film formingprocesses by the film forming unit block may be carried to the next filmforming unit block by either of the first and the second substratecarrying means. Thus the coating and developing system has a largedegree of freedom of carrying rout selection. Since the two substratecarrying means operate to carry substrates between the unit blocks,carrying load is shared by the two substrate carrying means, carryingefficiency can be improved and throughput can be increased. Since theexclusive substrate carrying means capable of accessing all the unitblocks are used for carrying a substrate between the unit blocks ondifferent layers, the carrying system is simple and a carrying programcan be easily simplified.

Since the plurality of film forming devices for forming films on asubstrate are disposed in the common processing vessel, the film formingdevices operated in the same processing atmosphere, and a temperaturecontrol system and a chemical solution applying nozzle can be used byall the film forming devices.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a schematic plan view of a coating and developing system in afirst embodiment according to the present invention;

FIG. 2 is a schematic perspective view of the coating and developingsystem shown in FIG. 1;

FIG. 3 is a schematic sectional side elevation of the coating anddeveloping system shown in FIG. 1;

FIG. 4 is a perspective view of a film forming unit, shelf units and acarrying device included in the coating and developing system shown inFIG. 1;

FIG. 5 is a front elevation of the shelf units of the coating anddeveloping system shown in FIG. 1;

FIG. 6 is a sectional side elevation of an interface block included inthe coating and developing system shown in FIG. 1;

FIG. 7 is a sectional side elevation of unit blocks included in thecoating and developing system shown in FIG. 1;

FIG. 8 is a perspective view of an example of an interface arm includedin the coating and developing system shown in FIG. 1;

FIGS. 9( a) and 9(b) are a plan view and a longitudinal sectional view,respectively, of a film forming unit included in the coating anddeveloping system shown in FIG. 1;

FIG. 10 is a plan view of a coating and developing system in a secondembodiment according to the present invention; and

FIG. 11 is a plan view of a prior art coating and developing system.

DESCRIPTION OF THE PREFERRED EMBODIMENTS

A coating and developing system in a first embodiment according to thepresent invention will be described. FIG. 1 is a schematic plan view ofa coating and developing system in a first embodiment according to thepresent invention to be used as a resist pattern forming system, FIG. 2is a schematic perspective view of the coating and developing system andFIG. 3 is a schematic sectional side elevation of the coating anddeveloping system. The coating and developing system has a carrierhandling block S1 for receiving a closed carrier 20 holding, forexample, thirteen wafers W, namely, substrates, and sending the sameout, a processing block S2 including, for example, five verticallyarranged unit blocks B1 to B5, and an interface block S3. An exposuresystem S4 is connected to the interface block S3.

The carrier handling block S1 has a carrier support table 21 capable ofsupporting a plurality of carriers 20 thereon, gates 22 formed in a wallbehind the carrier support table 21, and a transfer arm C capable ofextending through the gate 22 to the carrier 20 to take out the wafer Wfrom the carrier 20. The transfer arm C is able to move in horizontaldirections and vertical directions, to turn about a vertical axis and tomove in directions parallel to a direction in which the carriers 20 arearranged to carry the wafer W from one to another of transfer stagesTRS1, TRS2 and TRS-F of unit blocks B1 and B2.

The processing block S surrounded by a casing 24 is connected to theback end of the carrier handling block S1. In this embodiment, theprocessing block S2 includes a first unit block (first DEV layer) B1 forcarrying out a developing process, a second unit block (second DEVlayer) B2 for carrying out a developing process, a third unit block (TCTlayer) B3 for carrying out an antireflection film forming process forforming a second antireflection film over a resist film, a fourth unitblock (COT layer) B4 for carrying out a liquid resist applying process,and a fifth unit block (BCT layer) B5 for carrying out an antireflectionfilm forming process for forming a first antireflection film under theresist film. The unit blocks B1 to B5 are arranged vertically upward inthat order. The DEV layers B1 and B2 are developing unit blocks, the TCTlayer B3, the COT layer B4 and the BCT layer B5 are film forming unitblocks.

The construction of the first to the fifth unit block B (the blocks B1to B5) will be described. The unit blocks B1 to B5 are provided withmain arms A1 to A5, respectively. Each of the unit blocks B1 to B5 isprovided with a liquid-processing unit for applying a chemical solutionto the wafer W, a heating unit and a cooling unit for carrying out apretreatment and a post-treatment before and after a process to becarried out by the liquid-processing unit. The main arms A1 to A5 areexclusive carrying means A for carrying the wafer W from one to anotherof the liquid-processing units, the heating units and the cooling units.

The unit blocks B1 to B5 are the same in the layout of theliquid-processing unit, the heating unit, the cooling unit, and the mainarm A; that is, the centers of spin chucks for holding the wafer W ofthe liquid-processing units are aligned, the centers of heating platesof the heating units are aligned and the centers of cooling plates inthe cooling units are aligned.

The COT layer B4 shown in FIG. 1 will be described by way of example. Acarrying area R1 extending in a substantially central part of the COTlayer B4 along the length of the COT layer B4 parallel to the Y-axis inFIG. 1 connects the carrier handling block S1 and the interface blockS3. The wafer W is carried in the carrying area R1.

A coating unit 31, namely, a liquid-processing unit, provided with aplurality of coating devices for coating the wafer with a resist film isdisposed on the right-hand side, as viewed from the side of the carrierhandling block S1, of the carrying area R1. Each of the unit blocks isprovided with four shelf units U1, U2, U3 and U4 arranged in that orderon the left side of the carrying area R1. The shelf units U1, U2, U3 andU4 have hating units and cooling units stacked up in layers. Differentprocessing units for treating the wafer W before and after the wafer Wis processed by the coating unit 31 by a pretreatment and apost-treatment are stacked up, for example, in tow layers. Clean air iscirculated through the carrying area R1 thus demarcated by those unitsto reduce particles floating in the carrying area R1.

For example, the processing units for carrying out the pretreatment andthe post-treatment include cooling units (COL4) for adjusting thetemperature of the wafer W to a predetermined temperature beforeapplying a liquid resist to the wafer W, heating units (CHP4) called,for example, a prebaking unit for heating the wafer W after coating asurface of the wafer W with the liquid resist, a hydrophobicityimparting unit (ADH) for enhancing the adhesion of the liquid resist tothe wafer W, and a wafer edge exposure device (WEE) for selectivelyexposing only a peripheral part of the wafer W as shown in FIGS. 4 and5. The processing units, such as the cooling units (COL4) and theheating units (CHP4) are placed in processing vessels 51, respectively.The processing vessels 51 are stacked up in two layers in each of theshelf unit U1 to U4. A wall, facing the carrying area R1, of eachprocessing vessel 51 is provided with a gate 52 through which the waferW is carried into and carried out of the processing vessel 51. Thehydrophobicity imparting unit processes the wafer W in an HMDSatmosphere. The hydrophobicity imparting unit may be included in any oneof the film forming unit blocks B3 to B5.

The main arm A4 operates in the carrying area R1. The main arm A4 iscapable of carrying the wafer W from one to another of the processingunits of, for example, the shelf units U1 to U4, the coating unit 31,and shelf units U5 and U6. The main arm A4 is movable in horizontaldirections and vertical directions, is turnable about a vertical axisand is movable along the Y-axis.

A local area, contiguous with the carrier handling block S1, of thecarrying area R1 is a first transfer area R2. As shown in FIGS. 1 and 3,the shelf unit U5 is disposed in the transfer area R2 such that thetransfer arm C and the main arm A4 are able to gain access to the shelfunit U5. A first transfer arm D1, namely, a first transfer means, isdisposed in the first transfer area R2 to deliver the wafer W to and toreceive the wafer W from the shelf unit U5.

Referring to FIG. 3, the shelf unit U5 is provided with two firsttransfer stages TRS1, two first transfer stages TRS2, two first transferstages TRS3, two first transfer stages TRS4 and two first transferstages TRS5 respectively for the unit blocks B1 to B5 to transfer thewafers W from the shelf unit U5 to each of the main arms A1 to A5 and totransfer the wafers W reversely. Thus a first transfer stage group isformed by stacking up first transfer stages in layers. The firsttransfer arm D1 is movable in horizontal directions and verticaldirections to transfer the wafer W to and to receive the wafer from eachof the first transfer stages TRS1 to TRS5. The respective first transferstages TRS1 and the first transfer stages TRS2 of the first unit blockB1 and the second unit block B2 transfer the wafer W to and receive thewafer W from the transfer arm C. The first transfer stages TRS1 and TRS2correspond to transfer stages for the carrier handling block S1. Thesecond unit block B2 is provided with two first transfer stages TRS-F.The transfer stages TRS-F are used only for transferring the wafer W tothe processing block S2 by the transfer arm C. The transfer stages TRS-Fcorrespond to transfer stages for the carrier handing block S1 and maybe placed in the first unit block B1. The transfer stages TRS-F may beomitted and the transfer stage TRS1 and TRS2 may be used fortransferring the wafer W from the transfer arm C to the processing blockS2.

A local area, contiguous with the interface block S3, of the carryingarea RI is a second transfer area R3. Referring to FIG. 1, the shelfunit U6 is disposed in the transfer area R3 such that the main arms A1to A5 are able to gain access to the shelf unit U6. A second transferarm D2, namely, a second transfer means, is disposed in the secondtransfer area R3 to deliver the wafer W to and to receive the wafer Wfrom the shelf unit U6.

Referring to FIGS. 3 and 6, the shelf unit U6 has two second transferstages TRS6, two second transfer stages TRS7, two second transfer stagesTRS8, two second transfer stages TRS9 and two second transfer stagesTRS10 respectively for the unit blocks B1 to B5 to transfer the wafer Wfrom the shelf unit U6 to each of the main arms A1 to A5 of the unitblocks B1 to B5 and to transfer the wafer W reversely. Thus a secondtransfer stage group is formed by stacking up the second transfer stagesin layers. The first transfer arm D1 is movable in horizontal directionsand vertical directions to transfer the wafer W to and to receive thewafer from each of the second transfer stages TRS6 to TRS10. The wafer Wis transferred from the second transfer arm D2 to each of the secondtransfer stages TRS6 to TRS10 and is transferred reversely. The secondtransfer arm D2 is capable of moving in horizontal directions andvertical directions. The wafer W can be optionally transferred througheach of the first transfer stages TRS1 to TRS5 and TRS-F and the secondtransfer stages TRS6 to TRS1O from one to another of the unit blocks B1to B5 stacked in five layers by the first transfer arm D1 and the secondtransfer arm D2.

The other unit blocks B will be briefly described with reference toFIGS. 5 and 7. FIG. 5 is a view of the shelf units U1 to U4 taken fromthe side of the carrying area R1. The DEV layers B1 and B2 are similarin construction and are provided with developing units 32 for processingthe wafers W by a developing process. The DEV layers B1 and B2 aresimilar to the COT layers B4, except that the DEV layers B1 and B2 areprovided with heating units PEB1 and PEB2 generally called post-exposurebaking units for heating the wafer W after the wafer W has beenprocessed by an exposure process, cooling units COL1 and COL2 to adjustthe temperature of the wafer W heated by each of the heating units PEB1and PEB2 to a predetermined temperature, heating units POST1 and POST2called post-baking units for heating the wafer W to dry up the wafer Wprocessed by the developing process.

In the DEV layers B1 and B2, the main arms A1 and A2 carries the wafer Wfrom one to another of the first transfer stages TRS1, TRS2 and TRS-F,the second transfer stages TRS6 and TRS7, the developing units 32 andthe processing units of the shelf units U1 to U5.

The TCT layer B3 is provided with a second antireflection film formingunit 33 for forming a second antireflection film on the wafer W by asecond antireflection film forming process. The TCT layer B3 is similarto the COT layer Br, except the shelf units U1 to U4 of the TCT layer B3are provided with cooling units COL 3 for cooling the wafer W at apredetermined temperature before subjecting the waver W to theantireflection film forming process and heating units CHP3 for heatingthe wafer W processed by the antireflection film forming process. In theTCT layer B3, the main arm A3 carries the wafer W from one to another ofthe first transfer stages TRS3, the second transfer stages TRS8, thesecond antireflection film forming unit 33 and the processing units ofthe shelf units U1 to U4.

The BCT layer B5 is provided with a first antireflection film formingunit 34 as a liquid-processing unit for processing the wafer W by afirst antireflection film forming process. The BCT layer B5 is similarto the COT layer B4, except that the shelf units U1 to U4 are providedwith cooling units COL5 for cooling the wafer W at a predeterminedtemperature before subjecting the wafer W to the antireflection formingprocess and heating units CHP5 for heating the wafer W after processingthe wafer W by the antireflection film forming process, and are notprovided with any wafer edge exposure device WEE. The main arm A5 of thefifth unit block B5 carries the wafer W from one to another of the firsttransfer stages TRS5, the second transfer stages TRS10, the firstantireflection film forming unit 34 and the processing units of theshelf units U1 to U4.

As shown in FIG. 1, each of the heating units CHP3 to CHP5, POST1,POST2, PEB1 and PEB2 is provided with a heating plate 53 and a coolingplate 54 serving also as a carrying arm. The cooling plate 54 carriesthe wafer W between the main arm A1 and the heating plate 53. Thus asingle unit heats and cools the wafer W. Each of the cooling unit COL1to COL5 is provided, for example, with a water-cooled cooling plate.

FIG. 5 shows the layout of those processing units by way of example. Theprocessing units are not limited to the heating units CHP, PEB and POST,the cooling units COL, the hydrophobicity imparting unit ADH and thewafer edge exposure device WEE and may include processing units otherthan those processing units. The number of the processing units aredependent on processing times required by the processing units.

An exposure system S4 is connected to the shelf unit U6 of theprocessing block S2 by the interface block S3. The interface block S3 isprovided with an interface arm B for carrying the wafer W between theshelf unit U6 of the processing block S2 and the exposure system S4. Theinterface arm B is a carrying means for carrying the wafer W interposedbetween the processing block S2 and the exposure system S4. In thisembodiment, the interface arm B is able to move in horizontal directionsand vertical directions and is able to turn about a vertical axis tocarry the wafer W to each of the second transfer stages TRS6 to TRS9 ofthe first unit block B1 to the fourth unit block B4. In this embodiment,the second transfer stages TRS6 to TRS9 are stages related with theinterface block S3.

The interface arm B may be formed so as to carry the wafer W to andreceive the wafer from each of the second transfer stages TRS6 to TRS10of all the unit blocks B1 to B5. When the interface arm B is thusformed, the second transfer stages TRS6 to TRS10 are those related withthe interface block S3.

The main arms A (A1 to A5), the first transfer arm D1, the secondtransfer arm D2, the interface arm B and the liquid-processing unitswill be briefly explained. As shown in FIG. 4 by way of example, themain arm A is provided with two support arms 101 and 102 on which aperipheral part of the wafer W is seated. The support arms 101 and 102are able to move individually along a base 103. The base 103 can beturned about a vertical axis by a rotating mechanism 104, can behorizontally moved in directions parallel to the Y-axis along a Y-axisrail 107 attached to a surface, facing the carrying area R1, of a table106 supporting the shelf units U1 to U4, and can be vertically movedalong a vertical rail 108. Thus the support arms 101 and 102 can bemoved forward, backward, longitudinally parallel to the Y-axis andvertically and can be turned about a vertical axis. The support arms 101and 102 can transfer the wafer W to and can receive the wafer W fromeach of the component units of the shelf units U1 to U6, the firsttransfer stages TRS1 to TRS5, the second transfer stages TRS6 to TRS10and the liquid-processing units. The operation of the main arm A iscontrolled by a controller on the basis of instructions provided by acontrol unit 6. Order of the respective operations for receiving thewafer W of the support arms 101 and 102 can be optionally controlled bya program.

As shown in FIG. 8 by way of example, the interface arm B is providedwith a base 202, a support arm 201 on which a central part of the waferW is seated. The support arm 201 is able to move forward and backward onthe base 202. The base 202 is supported on a lifting arm 203 by arotating mechanism 204 for turning the base 202 about a vertical axis.The lifting arm 203 moves vertically along a vertical rail 205. Thus thearm 201 can be moved forward, backward and vertically and can be turnedabout a vertical axis to carry the wafer W to and to receive the wafer Wfrom each of the second transfer stages TRS6 to TRS9 of the shelf unitU6.

The first transfer arm D1 and the second transfer arm D2 are similar inconstruction to the interface arm B, except that the first transfer armD1 and the second transfer arm D2 are not turnable about a verticalaxis. The respective operations of the first transfer arm D, the secondtransfer arm D2 and the interface arm B are controlled by a controller,not shown, on the basis of instructions provided by the control unit 6.

The coating unit 31 will be briefly described in connection with FIG. 9.The coating unit 31 is provided with three coating devices 301, 302 and303 placed in a processing vessel 300. The processing devices 301 to 303are arranged on a base 304 along the Y-axis so as to face the carryingarea R1.

The coating devices 301 to 303 are similar in construction and henceonly the coating device 301 will be described by way of example. Thecoating device 301 is provided with a spin chuck 305 capable of holdingthe wafer W by suction in a horizontal position. The spin chuck 305 canbe rotated about a vertical axis by a driving device 306 and can bevertically moved. The spin chuck 305 and the wafer W supported on thespin chuck 305 are surrounded by a cup 307. A drain device 308 providedwith a discharge pipe and a drain pipe is connected to the bottom of thecup 307. A side rinsing mechanism 309 pours a rinsing liquid onto aperipheral part of the wafer W supported on the spin chuck 305. Therinsing mechanism 309 can be moved vertically and can be turned about avertical axis.

A common chemical liquid supply nozzle 310 for supplying a chemicalsolution to the coating devices 301 to 303 can be longitudinally movedalong a guide rail 311 extended parallel to the Y-axis between aposition on the outer side of the cup 307 of the coating device 301 anda position on the outer side of the cup 307 of the coating device 303,and can be vertically moved by a moving mechanism 312. In thisembodiment, the chemical solution supply nozzle 310 pours a liquidresist onto a substantially central part of the wafer W supported on thespin chuck 305 of each of the coating devices 301 to 303. Normally, thechemical solution supply nozzle 310 is held in a home area 313 on theouter side of the coating device 303.

A filter unit 314 is attached to the top wall of the processing vessel300. A discharge unit 315 is disposed on the bottom wall of theprocessing vessel 300. A gas in the processing vessel 300 is dischargedat a predetermined discharge rate by the discharge unit 315, and a cleangas of a predetermined temperature and a predetermined humidity issupplied through the filter unit 314 into the processing vessel 300 in adown flow to maintain the interior of the processing vessel 300 at apositive pressure higher than the pressure in the carrying area R1 inwhich the main arm A4 operates. Gates 316 through which the wafer W iscarried into and carried out of the processing vessel 300 are formed ina wall, facing the carrying area RI, of the processing vessel 300. Thegates 316 are covered with shutters, respectively.

In the coating unit 31, the main arm A4 carries the wafer W through thegate 316 into the processing vessel 300 and places the wafer W on thespin chuck 305 of the desired one of the coating devices 301 to 303.Then, the chemical liquid supply nozzle 310 pours a liquid resist onto acentral part of the wafer W, the spin chuck 305 rotates to spread theliquid resist radially outward over the surface of the wafer W bycentrifugal force to coat the surface of the wafer W with a liquidresist film. Then, the main arm A4 caries out the wafer W coated withthe liquid resist film from the coating unit 31.

The three coating devices 301 to 303 of the coating unit 31 are placedin the same processing atmosphere in the processing vessel 300.Therefore, the chemical liquid supply nozzle 310 can be used as a singlecommon nozzle for supplying the liquid resist to all the coating devices301 to 303. Thus the coating unit 31, as compared with a coating unitprovided with processing vessels 300 and chemical liquid supply nozzles310 respectively for coating devices 301 to 303, has the less number ofparts and needs less floor space.

Since the processing devices 301 to 303 are placed in the sameprocessing atmosphere in the processing vessel 300, a single air supplysystem and a single air discharge system can be used for all the coatingdevices 301 to 303, which is effective in reducing component members andnecessary floor space. Since the coating devices 301 to 303 are disposedin the same atmosphere, the coating devices 301 to 303 are able to carryout the coating process for coating the wafer with the liquid resistfilm in the same atmosphere, the coating process susceptible to theprocessing atmosphere can be carried out in the same mode by all thecoating devices 301 to 303.

Since the three coating devices 301 to 303 are mounted on the commonbase 304, the height adjustment of the support arms 101 and 102 of themain arm A4 relative to the spin chucks 305 can be achieved by adjustingthe respective vertical positions of the support arms 101 and 102relative to the spin chuck of only one of the coating devices 301 to303. Since the chemical liquid supply nozzle 310 is used for supplyingthe liquid resist to each of the coating devices 301 to 303, thevertical position of the chemical liquid supply nozzle 310 needs to beadjusted relative to the spin chuck 305 of only one of the coatingdevices 301 to 303. Thus time and work necessary for adjusting thevertical position of the chemical liquid supply nozzle 310 can bereduced.

The developing unit 32 is substantially similar to the coating unit 31,except that the developing unit 32 has a developer supply area extendingalong the length of a developer supply nozzle for pouring a developer ina direction parallel to the diameter of the wafer W, and is providedwith a cleaning liquid pouring nozzle. A plurality of developing devicesare disposed in the common processing vessel 300. The cleaning liquidpouring nozzle is similar to the chemical liquid supply nozzle 310 andcan be moved along the guide rail 311 and can be vertically moved by amoving mechanism. The cleaning liquid pouring nozzle pours a cleaningliquid onto the wafers W held on the spin chucks 305 of the coatingdevices 301 to 303.

In the developing unit 32, the main arms A1 and A2 carry the wafer Wthrough the gate 316 into the processing vessel 300 and places the waferW on the spin chuck 305 of predetermined one of the coating devices(developing devices) 301 to 303. Then, the chemical liquid supply nozzle310 pours a developer onto a central part of the wafer W and the spinchuck 305 supporting the wafer W makes half a turn to pour the developerover the entire surface of the wafer W. After a predetermined time haspassed, a cleaning liquid supply nozzle pours a cleaning liquid onto thewafer W to wash away the developer from the wafer W. Then, the wafer Wis rotated to dry the wafer W to complete the developing process.

The developing unit 32 may be provided, instead of the cleaning liquidsupply nozzle, with a cleaning mechanism which can be moved verticallyand can be turned about a vertical axis similarly to the side rinsingmechanism 309 to pour a cleaning liquid onto a central part of the waferW held on the spin chuck 302.

The first antireflection film forming unit 33 applies a chemical liquidfor forming an antireflection film to the surface of the wafer W beforethe liquid resist is applied to the wafer W. The second antireflectionfilm forming unit 34 applies a chemical liquid for forming anantireflection film to the surface of a resist film formed on the waferW. The antireflection film forming units 33 and 34 are the same inconstruction as the coating unit 31, except that the antireflection filmforming units 33 and 34 apply the chemical liquids for forming theantireflection films, respectively, to the wafer W.

The flow of the wafer W in the resist pattern forming system will bedescribed on an assumption that the resist film is sandwiched betweenthe antireflection films. The carrier 20 is delivered to the carrierhandling block S1. The transfer arm C takes out the wafer W from thecarrier 20 and transfers the wafer W to the first transfer stage TRS-Fof the shelf unit U5 of the second unit block B2. The wafer W istransferred via the first transfer stage TRS5 to the main arm A5 of theBCT layer B5 by the first transfer arm D1. Then, in the BCT layer B5,the main arm A5 carries the wafer sequentially to the cooling unit COL5,the first antireflection film forming unit 34, the heating unit CHP5 andthe second transfer stage TRS10 of the shelf unit U6 in that order toform the first antireflection film on the wafer w.

Subsequently, second transfer arm D2 carries the wafer W from the secondtransfer stage TRS1O to the second transfer stage TRS9 to transfer thewafer W to the COT layer B4. Then, the main arm A4 of the COT layer B4carries the wafer W sequentially to the hydrophobicity imparting unitADH, the cooling unit COL4, the coating unit 31, the heating unit CHP4and the first transfer stage TRS4 in that order to form the resist filmover the first antireflection film.

Then, the first transfer arm D1 carries the wafer W from the firsttransfer stage TRS4 to the first transfer stage TRS3 of the TCT layerB3. Then, the main arm A3 of the TCT layer B3 carries the wafer Wsequentially to the cooling unit COL3, the second antireflection filmforming unit 33, the heating unit CHP3, the wafer edge exposure deviceWEE and the second transfer stage TRS8 of the shelf unit U6 in thatorder to form the second antireflection film on the resist film.

Subsequently, the interface arm B carries the wafer W from the secondtransfer stage TRS8 to the exposure system S4 to subject the wafer W toa predetermined exposure process. After the exposure process has beencompleted, the interface arm B carries the wafer W to the secondtransfer stage TRS6 (TRS7) of the shelf unit U6 to deliver the wafer Wto the DEV layer B1 (DEV layer B2). Then, the main arm A1 (main arm A2)carries the wafer W from the second transfer stage TRS6 (TRS7) to theheating unit PEB1 (PEB2), the cooling unit COL1 (COL2), the developingunit 32, the heating unit POST1 (POST2) of the DEV layer B1 (DEV layerB2) to process the wafer W by a predetermined developing process. Afterthe developing process has been completed, the wafer is delivered to thefirst transfer stage TRS1 (TRS2). Then, the transfer arm C carries thewafer W to return the wafer W to the carrier 20 placed on the carriersupport table 21 of the carrier handling block S1.

The resist pattern forming system is provided with the control unit 6including a computer for managing recipes for the operations of theprocessing units, managing carrying recipes for carrying the wafer Walong carrying routes and controlling the processing operations of theprocessing units and the operations of the main arms A1 to A5, thetransfer arm C, the first transfer arm D1, the second transfer arm D2and the interface arm B. The control unit 6 controls the unit blocks B1to B5 to carry and process the wafer W.

The carrying recipe for the flow of the wafer W specifies a carryingroute along which the wafer W is carried in the unit block. Carryingrecipes are produced exclusively for the unit blocks B1 to B5 accordingto the types of films formed in the unit blocks B1 to B5. The carryingrecipes for the unit blocks B1 to B5 are stored in the control unit 6.

The wafer W is carried in one of a plurality of carrying modes specificto the types of films. There are a carrying mode of carrying the wafer Wto all the unit blocks B1 to B5, a carrying mode of carrying the wafer Wto the unit blocks (DEV layer B1, DEV layer B2) which carry out thedeveloping process, the unit block COT layer B4) which carries out theliquid resist application process and the unit block (BCT layer B5)which carries out the first antireflection film forming process, acarrying mode of carrying the wafer to the unit block (DEV layer B1, DEVlayer B2) which carries out the developing process, the unit block (COTlayer B4) which carries out a liquid resist application process, and aunit block (TCT layer B3) which carries out the second antireflectionfilm forming process, and a carrying mode of carrying the wafer W onlyto the unit block (DEV layer B1, DEV layer B2) which carries out thedeveloping process. A mode selector included in the control unit 6selects the unit blocks to which the wafer W is to be carried on thebasis of the type of a film to be formed and selects the optimum ones ofthe plurality of carrying recipes prepared for the selected unit blocks.Thus the proper unit blocks for forming the specified film are selected,the arms and the processing units of the unit blocks are controlled tocarry out a series of processes.

In this resist pattern forming system, the unit blocks respectively forforming different types of films, and the unit blocks for carrying outthe developing process are disposed in separate areas, respectively, andthose unit blocks are provided individually with the main arms A.Therefore, load on each of the main arms A is small, the carryingefficiency of the main arms A is improved and, consequently, thethroughput of the resist pattern forming system can be increased.

The unit block (COT layer B4) exclusively for forming the resist film,the unit block (BCT layer B5) exclusively for forming the firstantireflection film, the unit block (TCT layer B3) exclusively forforming the second antireflection film are stacked in layers. Therefore,a floor space in the processing block S2 needed for forming the twoantireflection films over and under the resist film is equal to thatneeded in the processing block S2 for forming only the resist film.Consequently, space in which the resist film forming system is installedcan be reduced.

Since the COT layer B4, the BCT layer B5 and the TCT layer B3 areindividual unit blocks for forming the film, it is possible to cope witha case where the antireflection film is to be formed and a case whereany antireflection film is not formed by selecting the necessary unitblocks from the DEV layers B1 and B2 (or either of the DEV layer B1 andthe DEV layer B2), the BCT layer B5, the COT layer B4 and the TCT layerB3. Since the unit blocks to be used have the same carrying routes,respectively, the carrying programs are not complicated, the carryingoperation for carrying the wafer W can be controlled by a simplecarrying program and the software is simplified when different films ofdifferent lots are formed by the one and the same coating and developingsystem.

As mentioned above, the unit blocks to be used for processing the waferW among the unit blocks B1 to B5 are determined by selecting the unitblocks and the carrying recipes for a desired film from the unit blocksfor forming films stored in the control unit 6 and the carrying recipesfor the unit blocks.

For example, when any antireflection film is not formed, only the DEVlayers B1 (B2) and the COT layer B4 are selected, and the wafer iscarried from the carrier 20, along a carrying route sequentially passingthe transfer arm C, the first transfer stage TRS-F of the shelf unit U5,the first transfer arm D1, the first transfer stage TRS4, the main arm Aof the COT layer B4, the hydrophobicity imparting unit ADH, the coolingunit COL4, the coating unit 31, the heating unit CHP4, the secondtransfer stage TRS9 of the shelf unit U6, the interface arm B, theexposure system S4, the interface arm B, the second transfer stage TRS6(TRS7) and the DEV layer B1 (B2) in that order.

When only the resist film and the antireflection film underlying theresist film are to be formed, only the DEV layer B1 (B2), the BCT layerB5 and the COT layer B4 are selected, and, for example, the wafer W iscarried from the carrier 20 along a carrying route sequentially passingthe transfer arm C, the first transfer stage TRS-F of the shelf unit U5,the first transfer arm D1, the first transfer stage TRS5, the main arm Aof the BCT layer B5, the cooling unit COL5, the first antireflectionfilm forming unit 34, the heating unit CHP5, the second transfer stageTRS10, the second transfer arm D2, the second transfer stage TRS9, themain arm A4 of the COT layer B4, the hydrophobicity imparting unit ADH,the cooling unit COL4, the coating unit 31, the heating unit CHP4, thesecond transfer stage TRS9 of the shelf unit U6, the interface arm B,the exposure system S4, the interface arm B, the second transfer stageTRS6 (TRS7) and the developing layer B1 (B2) in that order.

When only the resist film and the antireflection film overlying theresist film are to be formed, only the DEV layer B1 (B2), the COT layerB4 and the TCT layer B3 are selected, and, for example, the wafer W iscarried from the carrier 20 along a carrying route sequentially passingthe transfer arm C, the first transfer stage TRS-F of the shelf unit U5,the first transfer arm D1, the first transfer stage TRS4 and the mainarm A4 of the COT layer B4. A carrying route along which the wafer W iscarried in the COT layer B4 and a carrying route along which the wafer Wis carried after the wafer W has been processed by the COT layer B$ arethe same as those mentioned above.

The carrying routes respectively in the selected unit blocks (the COTlayer B4, the BCT layer B5 and the TCT layer B3) for forming the filmsare the same. Therefore, when different films are to be formed, it isnecessary only to select the proper unit blocks to be used and to carrythe wafer W to the selected unit blocks. Therefore, the carrying programis simple.

Since the transfer arms and the transfer stages for delivering the waferW to and receiving the wafer W from the unit blocks B1 to B5 stacked infive layers are installed in both the area in the processing block S2contiguous with the carrier handling block S1 and in the area contiguouswith the interface block S3, the wafer W processed by the film formingunit blocks B3 to B5 can be carried to the next layer by using either ofthe first transfer arm D1 and the second transfer arm D2. Thus thedegree of freedom of carrying route selection is large.

When the antireflection films are formed respectively over and under theresist film, the wafer W may be carried via the first transfer stageTRS5 of the shelf unit U5 to the COT layer B4 by the first transfer armD1 or may be carried via the second transfer stage TRS10 of the shelfunit U6 to the COT layer B4 by the second transfer arm D2 after theantireflection film has been formed by the BCT layer B5.

The large degree of freedom of carrying route selection facilitatesdesigning carrying programs for the main arms A1 to A5 of the unitblocks B1 to B5, the first transfer arm D1 and the second transfer armD2. Since the wafers W processed by the film forming unit blocks B3 toB5 can be delivered to the next layer by either of the first transferarm D1 and the second transfer arm D2, load on each of the transfer armsD1 and D2 is small and hence the throughput of the coating anddeveloping system can be increased.

Since the coating and developing system is provided with the transferstages STIR to TRS10, and the transfer arms D1 and D2 capable ofaccessing the transfer stages STIR to STIR, the carrying system forcarrying the wafer W between one and another of those unit blocks issimple in construction and hence carrying programs can be simplified.

Since the film forming unit blocks differ from each other only in thetypes of the chemical liquids used by the liquid-processing units,chemical liquid supply lines, drain lines and discharge lines can becollectively laid, cables of electric systems can be collectively laid,pipes and cables can be simply arranged and hence the coating anddeveloping system can be easily assembled. Consequently, the coating anddeveloping system can be efficiently manufactured in a short time at lowmanufacturing costs.

When the BCT layer B5, the COT layer B4 and the TCT layer B3 are formedof the similar unit blocks, namely, the similar liquid-processing units,the heating units and the cooling units, and provided with the main armsof the same layout and differ from each other only in the types ofchemical liquids used by the liquid-processing units, the coating anddeveloping system can be built by assembling unit blocks of the samedesign. The manufacture of the coating and developing system includingthe unit blocks of the same design, as compared with a coating anddeveloping system including unit blocks of different designs,facilitates manufacturing work, reduces faulty manufacturing work,increases the throughput of a coating and developing systemmanufacturing line and reduces the manufacturing costs of the coatingand developing system. Use of many common parts for building the coatingand developing system is effective in reducing manufacturing costs. Whenthe BCT layer B5, the COT layer B4 and the TCT layer B3 are built byassembling the same unit blocks, faulty manufacturing work can bereduced, accuracy increases and adjustment is facilitated, and timenecessary for adjustment can be reduced.

Even if any one of the film forming unit blocks becomes inoperative dueto accidental troubles, another film forming unit block can be used toform a film.

A coating and developing system in a second embodiment according to thepresent invention will be described with reference to FIG. 10. Thiscoating and developing system is combined with an exposure system S4which carries out an immersion exposure process which forms a liquidlayer on a surface of the wafer W, includes an auxiliary block S5interposed between a processing block S2 and an interface block S3, andis provided additionally with a film forming unit block including awater-repellent protective film forming unit, for forming awater-repellent protective film on a second antireflection film,disposed, for example, on a COT layer B4 or a TCT layer B3. Thewater-repellent protective film forming unit is a liquid-processing unitto deal with immersion exposure. The water-repellent protective filmforming unit forms a protective film capable of preventing a resist filmfrom being impregnated with a liquid for immersion exposure. The unitblock including the water-repellent protective film forming unit may beprovided with a protective film removing device for removing theprotective film after exposure and a cleaning device for removingparticles from the wafer W before and after exposure and for removingmatters that will affect adversely to exposure.

Installed in the auxiliary block S5 are an inspection unit 71 forinspecting the wafer between a film forming process and an exposureprocess and between the exposure process and a developing process, acleaning unit 72 for cleaning the wafer W by a cleaning process afterthe immersion exposure process, a shelf unit 7 built by stacking uptransfer stages TRS from which an interface arm B included in aninterface block S3 receives the wafer W and to which the interface arm Bdelivers the wafer W, a third transfer arm E for carrying the wafer Wfrom one to another of transfer stages TRS6 to TRS8 included in a shelfunit U6 in a processing block S2, the inspection unit 71, the cleaningunit 72 and parts of a shelf unit U7. The inspection unit 71 and thecleaning units 72 may be layered structures. Only cleaning units 72 orinspection units 71 may be disposed on the opposite sides of the thirdtransfer arm E. The arrangement of those components is optional.

The third transfer arm E is capable of moving in horizontal directionsand vertical directions and of turning about a vertical axis. Theinspection between the film forming process and the exposure processincludes measuring the thickness of the film formed on the wafer W andsearch for foreign matters on the wafer. The inspection between theexposure process and the developing process includes a photomaskalignment inspection. The auxiliary block S5 may be provided with analignment mark detector for detecting an alignment mark formed on asubstrate and a film removing unit for removing part of a film by alaser process.

At least one of functional units and devices is installed in theauxiliary block S5. The functional units and devices include a surfaceinspection unit for inspecting the surface of the wafer W, a filmthickness measuring unit for measuring the thickness of a film formed onthe wafer W, an irregularity detecting device for detectingirregularities in a liquid resist film, a cleaning unit for cleaning thewafer W before and/or after the developing process, a defocus inspectiondevice for inspecting a pattern for dislocation, a development defectsdetecting device for detecting defects in the film due to faultydevelopment, a particle counting device for counting particles adheringto the wafer W, a comet detecting device for detecting comets formed ina liquid resist film by bubbles or foreign matters contained in theliquid resist applied to the wafer W, a splash-back detecting device fordetecting the solvent of the liquid resist splashed from the liquidresist and adhered to the wafer W, a common defect detecting device fordetecting defects of the same shape appearing at the same positions onthe surfaces of wafers W, a scum detecting device for detecting residualresist remaining on the wafer W after the developing process, adefective resist film and faulty development detecting device fordetecting defects in the resist film and/or for detecting faultydevelopment (defect detecting device), a line width measuring device formeasuring the width of the lines of a patterned resist film, and aphotomask alignment inspecting device for inspecting the accuracy ofalignment of a photomask with the wafer W subjected to the exposureprocess.

Defocus inspection by the defocus inspection device finds out a defocuscondition of the exposure system through the comparison of a patternformed on the wafer W with a registered correct pattern. For example,the line width measuring device decides whether or not exposure andexposure time in which the exposure system processed the resist filmformed on the wafer W are proper through the comparison of a measuredpattern with a previously registered correct pattern. For example, thephotomask alignment inspecting device decides whether or not exposureand exposure time in which the exposure system processed the resist filmformed on the wafer W are proper through the comparison of a pattern ofa specific part which can be compared with a pattern of a lower layerwith a previously registered correct pattern.

When the wafer W is to be subjected to a cleaning process afterexposure, the wafer W is carried sequentially, for example, to a carrierhandling block S1, a BCT layer B5, a COT layer B4, a TCT layer B3 and aunit block for forming a water-repellent protective film in that order.Subsequently, the wafer W is carried sequentially, for example, to asecond transfer stage in the shelf unit U6, a second transfer arm D2, asecond transfer stage TRS8, a third transfer arm E in the auxiliaryblock S5, a transfer stage in the shelf unit U7, an interface arm B inthe interface block S3, a transfer stage and the exposure system S4 inthat order. The wafer W processed by an exposure process is carriedsequentially to the interface arm B in the interface block S3, atransfer stage in the shelf unit U7 of the auxiliary block S5, the thirdtransfer arm E, the cleaning unit 72, the third transfer arm E, atransfer stage TRS6 (TRS7) in the shelf unit U6, a main arm A1 (A2) anda DEV layer B1 (B2) in that order.

One out of a predetermined number of wafers W is subjected topredetermined inspections. For example, when the wafer W is to beinspected after forming a film thereon, the wafer W is inspected in theauxiliary block S5 before delivering the wafer W to the exposure systemS4. When the wafer W is to be inspected after exposure, the wafer Wreturned from the exposure system S4 to the auxiliary block S5 isinspected. When the wafer W is to be inspected after the developingprocess, the wafer processed by the developing process in the processingblock S2 is transferred to the auxiliary block S5 for inspection.

The water-repellent protective film is formed on the secondantireflection film to repel the liquid by the protective film duringimmersion exposure and to make the liquid hardly able to stay on thesurface of the wafer W. For example, the protective film is formed onthe surface of the wafer w and on a peripheral part of the back surfaceof the wafer W. The wafer W processed by the exposure process issubjected to a cleaning process to remove the protective film in orderto avoid producing particles by the protective film fallen off the waferW. For example, a chemical liquid for removing the protective film ispoured on the surface and the peripheral part of the back surface of thewafer W to remove the protective film, and the chemical liquid wettingthe wafer W is washed off by a cleaning liquid.

In the second embodiment, the auxiliary block S5 provided with theinspection unit and the cleaning unit is interposed between theprocessing block S2 and the interface block S3. Therefore, for example,the wafer W can be inspected and cleaned when the wafer W is transferredfrom the processing block S2 to the interface block S3 before the waferW is subjected to the exposure process after being processed by the filmforming process and/or the wafer W can be inspected and cleaned afterthe exposure process before subjecting the wafer W to the developingprocess. The complexity of the carrying program can be suppressed evenif the wafer W is subjected to inspection and cleaning in the foregoingmode.

The second embodiment may form the protective film on the resist filmwhen any antireflection film is not formed on the wafer W, the wafer Wmay be subjected to the cleaning process before or after the exposureprocess or before and after the exposure process. When any protectivefilm is not formed on the wafer W, the cleaning unit 72 is used to cleanthe wafer W.

According to the present invention, the wafer W may be processed only bythe developing unit blocks B1 and B2. The coating and developing systemmay be provided with only a single developing unit block. When the filmforming unit blocks TCT layer, the COT layer and the BCT layer arestacked upward in that order, the TCT layer and the COT layer forforming films immediately before the wafer W is subjected to theexposure process are near the DEV layer for processing the wafer Wprocessed by the exposure process. Consequently, the working range ofthe interface arm B is narrowed. However, the film forming unit blocks,namely, the BCT layer, the COT layer and the TCT layer, may be stackedupward in that order.

According to the present invention, the transfer stages of the shelfunit U5 accessible by the transfer arm C are not limited to those of theDEV layer B1 and the DEV layer B2, and may be transfer stages via whichthe wafer W can be transferred from the transfer arm C to at least oneof the stacked unit blocks and can be transferred reversely. The wafer Wmay be carried between each of the unit blocks B1 to B5 and theinterface block S3 by the second transfer arm D2 via a second transferstage TRS exclusively for carrying the wafer W between the interface armB and the shelf unit U6. The wafer W may be carried from one to anotherof the modules of the DEV layers B1 and B2 by a common main arm A.

Each unit block may be provided with one or some transfer stages TRS ofeach of the shelf units U5 and U6 and the transfer stages may have acooling function. The unit blocks, which receive the wafer W from andsend out the wafer W to the carrier handling block S1 and the interfaceblock S3, may be provided with exclusive carrying devices for carryingthe wafer W between the transfer arm C and the interface arm B orbetween the shelf units U5 and U6 in addition to the main arms A. Theshelf units U5 and U6 may be provided with modules other than thetransfer stages, such as a cooling unit. The stacked unit blocks B1 toB5 of the processing block S2 may be provided with an inspection unit asa processing unit. For example, the unit blocks B1 to B5 may be providedwith a film thickness measuring device instead of the wafer edgeexposure devices WEE of the COT layer B4 and the TCT layer B3. The DEVlayers B1 and B2 may be provided with a pattern alignment inspectingdevice and a development defect detecting unit for inspecting the waferW after the developing process. The unit blocks may be provided withinspection units disposed on the opposite sides of the carrying passagein which the main arm A operates. The processing block S2 may beprovided with a unit block exclusively for inspection units.

The main arm A may be used in common for carrying the wafer W by themodules of the DEV layers B1 and B2. The present invention is applicableto coating and developing systems for processing substrates other thansemiconductor wafers, such as glass substrates for liquid crystaldisplays (LCD substrates).

1. A coating and developing system comprising: a carrier handling blockfor receiving a substrate carried thereto by a carrier; a processingblock for processing the substrate transferred thereto from the carrierhandling block to form films including a resist film on the substrate;an interface block for carrying the substrate to an exposure system,receiving the substrate processed by the exposure system and returningthe substrate to the processing block to subject the substrate to adeveloping process and to transfer the substrate processed by thedeveloping process to the carrier handling block; wherein a) theprocessing block is provided with a plurality of film forming unitblocks stacked up in layers and a developing unit block stacked up inlayers with respect to the film forming unit blocks, b) the plurality offilm forming unit blocks stacked up in layers include a liquid resistapplying unit block for applying a liquid resist to the substrate, aliquid-processing unit block for applying a chemical solution forforming an antireflection film to the substrate before the liquid resistis applied to the substrate, and a liquid-processing unit block forapplying a chemical solution for forming an antireflection film to thesubstrate after the liquid resist has been applied to the substrate; andc) each of the unit blocks includes a liquid-processing unit forapplying a chemical solution to the substrate, a heating unit forheating the substrate, a cooling unit for cooling the substrate, and acarrying means for carrying the substrate from one to another of theliquid-processing unit, the heating unit and the cooling unit.
 2. Thecoating and developing system according to claim 1 further comprising:carrying recipes specifying substrate carrying paths in the unit blocks;and a mode selecting means for selecting one of a first carrying mode inwhich a substrate is carried to all the unit blocks, a second carryingmode in which a substrate is carried to a liquid resist applying unitblock, a liquid-processing unit block for forming an antireflection filmbefore the liquid resist is applied to a substrate and a developing unitblock for carrying out a developing process, and a third carrying modein which a substrate is carried to a liquid resist applying unit block,a chemical solution applying unit block for applying a chemical solutionfor forming an antireflection film after the liquid resist has beenapplied to a substrate, and a developing unit block for carrying out adeveloping process; wherein the mode selecting means selects the unitblocks to which a substrate is to be carried and selects the carryingrecipes for the selected unit blocks to process a substrate.
 3. Thecoating and developing system according to claim 1 further comprising: afirst transfer stage group of first transfer stages stacked up in layersfor the unit blocks, disposed on the side of the carrier handling blockto receive a substrate from and deliver a substrate to the carryingmeans of each unit block; a second transfer stage group of secondtransfer stages stacked up in layers and disposed on the side of theinterface block to receive a substrate from and deliver a substrate tothe carrying means of each unit block; a first substrate transfer meansfor carrying a substrate from one to another of the first transferstages; and a second substrate transfer means for carrying a substratefrom one to another of the second transfer stages.
 4. The coating anddeveloping system according to claim 3, wherein the first transfer stagegroup includes a transfer stage, for the carrier handling block, viawhich a substrate is carried between the carrier handling block and theprocessing block.
 5. The coating and developing system according toclaim 3, wherein the second transfer stage group includes an interfaceblock transfer stage via which a substrate is carried between theinterface block and the processing block.
 6. The coating and developingsystem according to claim 1, wherein the liquid-processing unit includedin the film forming unit block has a plurality of laterally arrangedsubstrate holding devices, respectively for holding a plurality ofsubstrates, placed in a common processing vessel, and a common chemicalsolution applying nozzle for applying a chemical solution to substratesheld by the plurality of substrate holding devices.
 7. The coating anddeveloping system according to claim 1, wherein an auxiliary blockprovided with functional units, which carries out processes after a filmforming process and before an exposure process and/or after the exposureprocess and before the developing process and after the developingprocess, is interposed between the processing block and the interfaceblock.
 8. The coating and developing system according to claim 7,wherein the functional units of the auxiliary block include at least oneof a film thickness examining unit for examining the thickness of a filmformed on a substrate, a cleaning unit for cleaning a substrate beforethe exposure process and/or after the exposure process, a defocusinspecting device for finding a faultily registered pattern occurred inthe exposure system, an irregular coating detecting device for detectingirregularities in a liquid resist film, a faulty development detectingdevice for detecting defects in a developed film, a particle countingdevice for counting particles adhering to a substrate, a comet detectingdevice for detecting comets in a resist film formed on a substrate, asplash-back detecting device, a defect detecting device for detectingdefects in the surface of a substrate, a scum detecting device fordetecting residual resist remaining on a substrate processed by adeveloping process, a defect detecting device for detecting defectscaused by a liquid resist applying process and/or a developing process,a line width measuring device for measuring lines of a patterned resistfilm formed on a substrate, and a register examining device forexamining the register of a photomask on a substrate after an exposureprocess.
 9. The coating and developing system according to claim 7,wherein the exposure system forms a liquid layer on the surface of asubstrate for immersion exposure, the functional unit of the auxiliaryblock is a cleaning unit for cleaning a substrate processed by immersionexposure.
 10. The coating and developing system according to claim 9,wherein a protective film forming unit block for forming awater-repellent protective film over a resist film formed on a substrateis laid on the plurality of stacked film forming unit blocks.
 11. Thecoating and developing system according to claim 1, wherein theplurality film forming unit blocks are the same in the layout of theliquid-processing unit, the heating unit1 the cooling unit and thecarrying means.
 12. A coating and developing method to be carried out bya coating and developing system comprising: a carrier handling block forreceiving a substrate carried thereto by a carrier; a processing blockfor processing the substrate transferred thereto from the carrierhandling block to form films including a resist film on the substrate;an interface block for carrying the substrate to an exposure system,receiving the substrate processed by the exposure system and returningthe substrate to the processing block to subject the substrate to adeveloping process and to transfer the substrate processed by thedeveloping process to the carrier handling block; wherein a) theprocessing block is provided with a plurality of film forming unitblocks stacked up in layers and a developing unit block stacked up inlayers with respect to the film forming unit blocks, b) the plurality offilm forming unit blocks stacked up in layers include a liquid resistapplying unit block for applying a liquid resist to the substrate, aliquid-processing unit block for applying a chemical solution forforming an antireflection film to the substrate before the liquid resistis applied to the substrate, and a liquid-processing unit block forapplying a chemical solution for forming an antireflection film to thesubstrate after the liquid resist has been applied to the substrate; andc) each of the unit blocks includes a liquid-processing unit forapplying a chemical solution to the substrate, a heating unit forheating the substrate, a cooling unit for cooling the substrate, and acarrying means for carrying the substrate from one to another of theliquid-processing unit, the heating unit and the cooling unit; saidcoating and developing method comprising the steps of: forming a firstantireflection film on a surface of a substrate by the film forming unitblock; forming a resist film by applying a liquid resist to the firstantireflection film formed on the surface of the substrate by the filmforming unit block different from that formed the first antireflectionfilm; forming a second antireflection film over the resist film by thefilm forming unit block different from that formed the resist film; andsubjecting the substrate coated with the resist film and processed by anexposure process to a developing process by the developing unit blockincluded in the layer other than that including the film forming unitblocks.
 13. A coating and developing method to be carried out by acoating and developing system comprising: a carrier handling block forreceiving a substrate carried thereto by a carrier; a processing blockfor processing the substrate transferred thereto from the carrierhandling block to form films including a resist film on the substrate;an interface block for carrying the substrate to an exposure system,receiving the substrate processed by the exposure system and returningthe substrate to the processing block to subject the substrate to adeveloping process and to transfer the substrate processed by thedeveloping process to the carrier handling block; wherein a) theprocessing block is provided with a plurality of film forming unitblocks stacked up in layers and a developing unit block stacked up inlayers with respect to the film forming unit blocks, b) the plurality offilm forming unit blocks stacked up in layers include a liquid resistapplying unit block for applying a liquid resist to the substrate, aliquid-processing unit block for applying a chemical solution forforming an antireflection film to the substrate before the liquid resistis applied to the substrate, and a liquid-processing unit block forapplying a chemical solution for forming an antireflection film to thesubstrate after the liquid resist has been applied to the substrate; andc) each of the unit blocks includes a liquid-processing unit forapplying a chemical solution to the substrate, a heating unit forheating the substrate, a cooling unit for cooling the substrate, and acarrying means for carrying the substrate from one to another of theliquid-processing unit, the heating unit and the cooling unit; saidcoating and developing method comprising the steps of: selecting one ofa first carrying mode in which a substrate is carried to all the filmforming unit blocks, a second carrying mode in which a substrate iscarried to the liquid resist applying unit block and to aliquid-processing unit block for forming an antireflection film before aresist film is formed on a substrate, and a third carrying mode in whicha substrate is carried to the liquid resist applying unit block forapplying a liquid resist to the substrate and to the liquid-processingunit block for applying a chemical solution for forming anantireflection film to the substrate after the liquid resist has beenapplied to the substrate; forming films on the substrate by carrying thesubstrate from one to another of the film forming unit blocks in theselected carrying mode; and subjecting the substrate coated with thefilms and processed by an exposure process to a developing process by adeveloping unit block in a layer other than layers including theplurality of film forming unit blocks.